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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA627
DESCRIPTION *With TO-3 package *Wide area of safe operation *Large current capability APPLICATIONS *Power amplifier applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -7 60 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-0.5A ; VCE=-10V 30 MIN -100 -100 -5
2SA627
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
-2.0 -2.5 -0.1 -0.1 120 15
V V mA mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA627
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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